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ESD damage

We are indebted to Rohm Electronics for these photos of ESD damage to components returned by their clients.

This failed IC was one of several rejected as low input resistance (leaky) at a particular input pin. Sectioning in Japan identified the partial short through the silicon from the top as shown by the small well on the track i.e. top of short circuit.

Photo courtesey of Rohm Electronics

Photos courtesey of Rohm Electronics

This transistor was also confirmed failed by ESD. You can see where the discharge energy surge has buried through the weakest point(s) in the oxide layer through to the silicon. Bipolar devices are becoming very small and susceptible to ESD.

 

 


The ESD Guide

Our on-line guide to ESD prevention in electronics manufacture, using the new 61340-5-1 standard. Check out some of the key requirements.

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